Optical properties of GaSe1-xSx series layered semiconductors grown by vertical bridgman method

Materials Chemistry and Physics

Volumn 88, Issue 2-3, 2004, Pages 313-317

  Wu, C C ^a   Ho, C H ^a   Shen, W T ^a   Cheng, Z H ^a   Huang, Y S ^b   Tiong, K K ^c  

^a NATIONAL DONG HWA UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

GaSe 1 xSx; Piezoreflectance (PzR) measurement; Vertical Bridgman method

Indexed keywords

COMPOSITION; CRYSTAL STRUCTURE; ENERGY GAP; LIGHT TRANSMISSION; MONOLAYERS; OPTICAL PROPERTIES; PHOTONS; SEMICONDUCTOR GROWTH; TRANSDUCERS;

GASE1-XSX; OPTICAL TECHNIQUES; PIEZOREFLECTANCE (PZR) MEASUREMENT; VERTICAL BRIDGMAN METHOD;

GALLIUM COMPOUNDS;

EID: 5444255080     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2004.07.011     Document Type: Article

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