Optical lithography for the 32nm node

Journal of Photopolymer Science and Technology

Volumn 18, Issue 5, 2005, Pages 579-586

  Sewell, Harry ^a   McCafferty, Diane ^a   Wagner, Christian ^b   Markoya, Louis ^a  

^a ASML US Inc   (United States)

^b ASML   (Netherlands)

Author keywords

32 nm node; 38nm node; ArF immersion lithography; High n immersion fluids

Indexed keywords

EID: 22144462118     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.18.579     Document Type: Article

References (8)

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2. S.Peng, R.H.French, W.Qiu, R.C.Wheland, M.Yang, M.F.Lemon, K.Winey, "Second-generation fluids for 193nm immersion lithography", SPIE, 2005, Volume #5754.
3. P.Zhang, B.H.Budhlall, X.Gao, et.al., "High-refractive index immersion fluids for 193-nm immersion lithography", SPIE 2005, Volume #5754.
4. T.Miyamatsu, Y.Wang, et.al.,"Material design for immersion lithography with high-refractive index fluid", SPIE, 2005, Volume #5753.
5. M.Totzeck, P.Graupner, T.Heil, et.al. "How to describe polarization influence on imaging", SPIE, 2005, Volume #5754.
6. D.G.Flagello, S.G.Hansen, B.Geh, et.al., "Challenges with hyper-NA (NA>1.0) polarized light lithography for sub-lambda/4 resolution", SPIE, 2005, Volume #5754.
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8. C.Chen, T.Gau, L.Shiu, B.Lin, "Mask polarization effect in hyper-NA systems", SPIE 2005, Volume #5754.