Influence of ballistic effects in ultra-small MOSFETs

2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts

Volumn , Issue , 2004, Pages 32-33

  Saint Martin, J ^a   Aubry Fortuna, V ^a   Bournel, A ^a   Dollfus, P ^a   Galdin, S ^a   Chassat, C ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRONS; GATES (TRANSISTOR); MONTE CARLO METHODS; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON; TRANSPORT PROPERTIES;

BALLISTIC ELECTRONS; BALLISTIC TRANSPORT; DEVICE ENGINEERING; ROUGHNESS SCATTERING; TRANSVERSE MASS;

MOSFET DEVICES;

EID: 21844477063     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iwce.2004.1407304     Document Type: Conference Paper

References (2)

1. M. Lundstrom and Z. Ren, IEEE Trans. Electron. Dev., vol. 49, pp. 133-141, 2002
2. J. Saint Martin, A. Bournel, P. Dollfus., to be published in IEEE Trans. Electron Dev., July 2004