Superluminescent diodes at 1.55 μm based on quantum-well and quantum-dot active regions

Progress in Biomedical Optics and Imaging - Proceedings of SPIE

Volumn 5739, Issue , 2005, Pages 116-121

  Li, W ^a   Ronkko R ^a   Rydefalk, A ^a   Poyhonen P ^a   Pessa, M ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

1.55 m superluminescent diode; GaInAsP InP quantum well structure; Molecular beam epitaxy; Quantum dots; Tilted ridge waveguide stripe

Indexed keywords

ARSENIC COMPOUNDS; BANDWIDTH; FIBER OPTIC SENSORS; LIGHT MODULATION; MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; TOMOGRAPHY; WAVELENGTH DIVISION MULTIPLEXING;

1.55 ΜM SUPERLUMINESCENT DIODES; GAINASP/INP QUANTUM WELL STRUCTURE; OPTICAL POWER; SUPERLUMINESCENT DIODES; TILTED RIDGE WAVEGUIDE STRIPE;

LIGHT EMITTING DIODES;

EID: 21844472249     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.590362     Document Type: Conference Paper

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