High-power CW operation of GaInAsP/InP superluminescent light-emitting diode with tapered active region

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 7 A, 2001, Pages

  Yamatoya, T ^a   Sekiguchi, S ^a   Koyama, F ^a   Iga, K ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Multi wavelength light source; Spectrum slicing; Superluminescent diode; Tapered active region; Wavelength division multiplexing

Indexed keywords

CONTINUOUS WAVE LASERS; LUMINESCENCE; MATHEMATICAL MODELS; POWER GENERATION; SEMICONDUCTING GALLIUM ARSENIDE; SPECTRUM ANALYSIS; WAVELENGTH DIVISION MULTIPLEXING;

SPECTRUM SLICING; SUPERLUMINESCENT LIGHT EMITTING DIODES (SLD); TAPERED ACTIVE REGION;

LIGHT EMITTING DIODES;

EID: 0035389516     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l678     Document Type: Article

References (9)