Optical gate realization by laser crossing in thin-film semiconductors on glass

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5723, Issue , 2005, Pages 179-186

  Erlacher, Artur ^a   Ullrich, Bruno ^a   Konopinski, Ryan J ^a   Haugan, Heather J ^b  

^a BOWLING GREEN STATE UNIVERSITY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

All optical switching; II VI compounds; III V compounds; Laser ablation; Photonics; Thin film semiconductors on glass

Indexed keywords

ALL-OPTICAL SWITCHING; II-VI COMPOUNDS; III-V COMPOUNDS; PHOTONICS; THIN-FILM SEMICONDUCTORS ON GLASS;

ABLATION; CHEMICAL VAPOR DEPOSITION; LASER BEAMS; LIGHT EMITTING DIODES; NATURAL FREQUENCIES; PHOTONS; PULSED LASER DEPOSITION; SEMICONDUCTOR MATERIALS; THIN FILMS;

GLASS;

EID: 21844462531     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.590760     Document Type: Conference Paper

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