Strain-dependent hole masses and piezoresistive properties of silicon

2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts

Volumn , Issue , 2004, Pages 173-174

  Matsuda, Kazunori ^a  

^a NARUTO UNIVERSITY OF EDUCATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; CAPACITANCE; CRYSTALLOGRAPHY; ELECTRON ENERGY LEVELS; HAMILTONIANS; MATHEMATICAL MODELS; MOSFET DEVICES; PIEZOELECTRIC DEVICES; RELAXATION PROCESSES; STRAIN; STRESS ANALYSIS; THRESHOLD VOLTAGE;

BAND MIXING (BM); DEGENERACY LIFTING (DL); MASS CHANGE EFFECT; PIEZORESISTIVITY; STRESSED SILICON;

SEMICONDUCTING SILICON;

EID: 21844444321     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iwce.2004.1407382     Document Type: Conference Paper

References (5)

1. G. L. Bir and G. E. Pikus, Symmetry and Strain-Induced Effect in Semiconductor (Wiley, New York, 1974).
2. A. P. Friedrich, P. A. Besse, C. M. A. Ashruf, and R. S. Porovic, Sens. Actuators A66, 125(1998).
3. C. K. Kim, M. Cardona and S. Rodoriguez, "Effect of free carriers on the elastic constants of p-type silicon and germanium," Phys. Rev. B 13, 5429(1976).
4. K. Hess, Advanced Theory of Semiconductor Devices (IEEE Press, 1999).
5. K. Matsuda and Y. Kanda, "Stress-induced effects on depletion-layer capacitance of metal-oxide-semiconductor capacitors," Appl. Phys. Lett. 63, 4351(2003).