Characterization of a novel piezo-tunneling strain sensor

Sensors and Actuators, A: Physical

Volumn 66, Issue 1-3, 1998, Pages 125-130

  Friedrich, Andreas P ^a   Besse, Pierre André ^a   Ashruf, Colin M A ^b   Popovic, Rade S ^a  

^a EPFL   (Switzerland)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Piezo tunnel effect; Shallow junctions; Strain sensors; Temperature sensitivity

Indexed keywords

LOW TEMPERATURE PROPERTIES; PIEZOELECTRIC TRANSDUCERS; SEMICONDUCTOR JUNCTIONS; SILICON SENSORS;

PIEZO-TUNNELING STRAIN SENSORS; TEMPERATURE SENSITIVITY;

STRAIN GAGES;

EID: 0032047192     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(97)01759-7     Document Type: Article

References (15)

1. C.S. Smith, Piezoresistance effect in germanium and silicon, Phys. Rev. 94 (1954) 42-49.
2. Y. Kanda, A graphical representation of the piezoresistance coefficients in silicon. IEEE Trans. Electron Devices ED-29 ( 1982) 64-70.
3. W. Rindner, Resistance of elastically deformed shallow p-n junctions. J. Appl. Phys. 33 (1962) 2479-2480.
4. J.J. Wortman, J.R. Hauser, R.M. Burger, Effect of mechanical stress on p-n junction device characteristics, J. Appl. Phys. 35 (1964) 2122-2131.
5. T.F. Longwell, An experimental semiconductor microphone, Automatic Electric Tech. J. (1968) 110-116.
6. B. Puers, L. Reynaert, W. Snoeys, W.M.C. Sansen, A new uniaxial accelerometer in silicon based on the piezojunction effect. IEEE Trans. Electron Devices ED-35 (1988) 764-770.
7. J. Matovic, Z. Djuric, N. Simicic, A. Vujanic, Piezojunction effect based pressure sensor. Electron. Lett. 29 (1993) 565-566.
8. S.M. Sze, Physics of Semiconductor Devices, 2nd ed., John Wiley, New York, 1981.
9. A.P. Friedrich, P.A. Besse, E. Fullin, R.S. Popovic, Lateral backward diodes as strain sensors, Tech. Digest, Int. Electron Devices Meet, (IEDM 95), Washington, DC, USA, 10-13 Dec., 1995, pp. 597-600.
10. G.A.M. Hurkx, H.C. de Graaff, W.J. Kloostermann, M.P.G. Knuvers, A new analytical diode model including tunneling and avalanche breakdown, IEEE Trans. Electron Devices 39 (1992) 2090-2097.
11. A.P. Friedrich, P.A. Besse, C.M.A. Ashruf, R.S. Popovic, Optimisation of anew type of strain sensor based on the piezo-tunneling effect, Tech. Digest, Simulation and Design of Microsystems and Microstructures (Microsim II), Lausanne, Switzerland, 17-19 Sept., 1997, pp. 137-146.
12. A. Prak, M. Elvenspoek, J.H.J. Fluitman, Selective mode excitation and detection of micromachined resonators, Tech. Digest, Micro Electro Mechanical Systems (MEMS '92), Travemunde, Germany, 4-7 Feb., 1992 pp. 220-225.
13. R.C. Hibbeler, Mechanics of Materials, Macmillan, New York, 1991.
14. S. Timoshenko, Théorie des Vibrations, Librairie Polytechnique Ch. Beranger, Paris, 1954.
15. W.D. Pilkey, Stress, Strain, and Structural Matrices, John Wiley, New York, 1994.