Fabrication, device design and mobility enhancement of germanium channel MOSFETs

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn 1, Issue , 2004, Pages 306-309

  Shang, Huiling ^a   Gousev, E ^a   Gribelyuk, M ^b   Chu, J O ^a   Mooney, P M ^a   Wang, X ^b   Guarini, K W ^a   Ieong, M ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Microelectronics Division   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON MOBILITY; HOLE MOBILITY; HYSTERESIS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GERMANIUM; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

MOBILITY CHANNEL; MOBILITY ENHANCEMENT; NITRIDATION; TERMAN METHODS;

MOSFET DEVICES;

EID: 21644488895     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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