Modeling of retention time distribution of DRAM cell using a Monte-Carlo method

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 399-402

  Jin, Seonghoon ^a   Yi, Jeong Hyong ^a   Choi, Jae Hoon ^b   Kang, Dae Gwan ^b   Park, Young June ^a   Min, Hong Shick ^a  

^a Seoul National University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON TRAPS; ELECTRON TUNNELING; ENERGY GAP; GREEN'S FUNCTION; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MATHEMATICAL MODELS; MONTE CARLO METHODS; SPURIOUS SIGNAL NOISE; STATISTICAL METHODS; INTELLIGENT SYSTEMS; STRESSES;

DRAM CELLS; INTERFACE TRAPS; RETENTION TIME; TRAP-ASSISTED TUNNELING;

RANDOM ACCESS STORAGE; MONTE CARLO METHODS;

'CURRENT; BAND GAP NARROWING; DATA RETENTION TIME DISTRIBUTION; DRAM CELLS; GREENS FUNCTION; MODELING OF RETENTION; MONTECARLO METHODS; RETENTION TIME DISTRIBUTION; STRESS-INDUCED; TRAP ASSISTED TUNNELING;

EID: 21644471405     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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