An efficient surface potential solution algorithm for compact MOSFET models

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 755-758

  Rios, Rafael ^a   Mudanai, Sivakumar ^a   Shih, Wei Kai ^a   Packan, Paul ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; APPROXIMATION THEORY; COMPUTER SIMULATION; ELECTROSTATICS; ERROR ANALYSIS; ITERATIVE METHODS; THRESHOLD VOLTAGE; APPROXIMATION ALGORITHMS; CIRCUIT SIMULATION; MOSFET DEVICES;

CIRCUIT SIMULATION; COMPUTER CODES; ELECTROSTATIC POTENTIAL; SURFACE POTENTIAL;

MOSFET DEVICES; SURFACE POTENTIAL;

ANALYTIC APPROXIMATION; BUILDING BLOCKES; COMPACT MOSFET MODELS; EFFICIENT SURFACE; IMPLICIT SURFACES; POTENTIAL EQUATION; ROBUST ALGORITHM; SOLUTION ALGORITHMS; SURFACE POTENTIAL-BASED; SURFACE-POTENTIAL SOLUTIONS;

EID: 21644469108     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. nd Edition, New York: McGraw-Hill, 1999.
2. H. Park et al., IEEE T-CAD, p. 376, Mar. 1991.
3. A. Boothroyd et al., IEEE T-CAD, p. 1512, Dec. 1991.
4. R. van Langevelde et al., Solid-State Elec., V. 44, 2000.
5. G. Gildenblat et al., CICC Proceedings, Sept. 2003.
6. MOS11, Level 1101, www.semiconductors.philips.com
7. M. Miura-Mattausch et al., IEEE CAD-15, Jan. 1996.
8. K. Joardar et al., IEEE TED-45, Jan. 1998.
9. R. Rios et al., IEDM Tech. Digest, p 937, Dec. 1995.
10. J. Sleight et al., TED, V45, pp. 821-825, 1998.
11. C. McAndrew et al., IEEE TED-49, Jan. 2002.