Predictive compact modeling of NQS effects and thermal noise in 90nm mixed-signal/RF CMOS technology

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 747-750

  Shih, Wei Kai ^a   Mudanai, Siva ^a   Rios, Rafael ^a   Packan, Paul ^a   Becher, David ^a   Basco, Ricardo ^a   Hung, Celia ^a   Jalan, Umesh ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITIVE COUPLING; NON-QUASI-STATIC (NQS) EFFECTS; QUANTUM CORRECTION; SURFACE POTENTIAL; CMOS TECHNOLOGY; COMPACT MODEL; INDUCED GATE NOISE; MIXED SIGNAL; NOISE MODELS; PHYSICAL APPROACHES; RADIOFREQUENCIES; SINGLE SET OF PARAMETERS; TRANSISTOR PERFORMANCE;

CAPACITANCE; COMPUTER SIMULATION; DIFFERENTIAL EQUATIONS; NATURAL FREQUENCIES; QUANTUM THEORY; THERMAL NOISE; TRANSISTORS; CMOS INTEGRATED CIRCUITS;

CMOS INTEGRATED CIRCUITS; THERMAL NOISE;

EID: 21644432588     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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5. R. van Rangevelde et al., IEDM Tech Digest, pp. 867 - 870, 2003