메뉴 건너뛰기




Volumn 3214, Issue , 1997, Pages 48-56

Thermal stability of PECVD W-B-N thin film as a diffusion barrier

Author keywords

Amorphous phase; Diffusion barrier; Electromigration; PECVD; Thermal stability; W B N

Indexed keywords

AMORPHOUS FILMS; ATOMIC PHYSICS; BORON; BORON COMPOUNDS; CHEMICAL PROPERTIES; CHEMICAL STABILITY; COPPER; DIFFUSION; DIFFUSION BARRIERS; ELECTROMIGRATION; PHASE STABILITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON COMPOUNDS; SOLIDS; THERMODYNAMIC STABILITY; THIN FILM DEVICES; THIN FILMS;

EID: 21544465353     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.284664     Document Type: Conference Paper
Times cited : (5)

References (12)
  • 2
    • 57649207730 scopus 로고
    • Semiconductor Industry Association, San Jose, CA
    • National Technology Roadmap for Semiconductors, pp. 94-108, Semiconductor Industry Association, San Jose, CA, 1995.
    • (1995) National Technology Roadmap for Semiconductors , pp. 94-108
  • 3
    • 0029223853 scopus 로고
    • Comparison of amorphous and polycrystalline tungsten nitride diffusion barrier for MOCVD-Cu metallization
    • C.S. Kwon, D.J. Kim, C.W. Lee, Y.T. Kim and I-H. Choi, "Comparison of amorphous and polycrystalline tungsten nitride diffusion barrier for MOCVD-Cu metallization", Mat. Res. Soc. Symp. Proc. 355, pp. 441-445, 1995.
    • (1995) Mat. Res. Soc. Symp. Proc , vol.355 , pp. 441-445
    • Kwon, C.S.1    Kim, D.J.2    Lee, C.W.3    Kim, Y.T.4    Choi, I.-H.5
  • 5
    • 0029487574 scopus 로고
    • The characteristics of nitrogen implanted tungsten film as a new diffusion barrier for metal organic chemical vapor deposited Cu metallization
    • C.S. Kwon, Y.T. Kim, S-K. Min, and I-H. Choi, "The characteristics of nitrogen implanted tungsten film as a new diffusion barrier for metal organic chemical vapor deposited Cu metallization", Jpn. J. Appl. Phys. 34, pp. 78-81, 1995.
    • (1995) Jpn. J. Appl. Phys , vol.34 , pp. 78-81
    • Kwon, C.S.1    Kim, Y.T.2    Min, S.-K.3    Choi, I.-H.4
  • 7
    • 0037606254 scopus 로고
    • 2 accross different barrier layers
    • 2 accross different barrier layers", Appl. Phys. Lett. 57, pp. 617-619, 1990.
    • (1990) Appl. Phys. Lett , vol.57 , pp. 617-619
    • Chang, C.A.1    Hu, C.K.2
  • 8
    • 0008988230 scopus 로고
    • Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions
    • K. Holloway, P.M. Fryer, C. Cabral, Jr. J.M.E. Harper, P.J. Bailey, and K.H. Kelleher, "Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions", J. Appl. Phys. 71, pp. 5433-5444, 1992.
    • (1992) J. Appl. Phys , vol.71 , pp. 5433-5444
    • Holloway, K.1    Fryer, P.M.2    Cabral Jr., C.3    Harper, J.M.E.4    Bailey, P.J.5    Kelleher, K.H.6
  • 10
    • 3743108133 scopus 로고
    • New insights on the effect of hydrogen to tungsten hexafluoride ratio on PECVD-W thin film
    • Y.T. Kim, J.S. Hong, and S-K. Min, "New insights on the effect of hydrogen to tungsten hexafluoride ratio on PECVD-W thin film", Appl. Phys. Lett. 59, pp. 3136-3138, 1991.
    • (1991) Appl. Phys. Lett , vol.59 , pp. 3136-3138
    • Kim, Y.T.1    Hong, J.S.2    Min, S.-K.3
  • 11
    • 36448998924 scopus 로고
    • Characteristics of plasma deposited tungsten nitride thin films
    • C.W. Lee and Y.T. Kim, "Characteristics of plasma deposited tungsten nitride thin films", Appl. Phys. Lett. 62, pp. 3312-3314, 1993.
    • (1993) Appl. Phys. Lett , vol.62 , pp. 3312-3314
    • Lee, C.W.1    Kim, Y.T.2
  • 12
    • 0001477024 scopus 로고
    • New method to improve thermal stability in the interface of silicon and tungsten by the interposition of plasma deposited tungsten nitride thin film
    • C.W. Lee, Y.T. Kim, and J.Y. Lee, "New method to improve thermal stability in the interface of silicon and tungsten by the interposition of plasma deposited tungsten nitride thin film", Appl. Phys. Lett. 64, pp. 619-621, 1994.
    • (1994) Appl. Phys. Lett , vol.64 , pp. 619-621
    • Lee, C.W.1    Kim, Y.T.2    Lee, J.Y.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.