Thermal stability of PECVD W-B-N thin film as a diffusion barrier

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3214, Issue , 1997, Pages 48-56

  Kim, Yong Tae ^a   Kim, Dong Joon ^a,b   Lee, Chang Woo ^c   Park, Jong Wan ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Hanyang University   (South Korea)

^c Kookmin University   (South Korea)

Author keywords

Amorphous phase; Diffusion barrier; Electromigration; PECVD; Thermal stability; W B N

Indexed keywords

AMORPHOUS FILMS; ATOMIC PHYSICS; BORON; BORON COMPOUNDS; CHEMICAL PROPERTIES; CHEMICAL STABILITY; COPPER; DIFFUSION; DIFFUSION BARRIERS; ELECTROMIGRATION; PHASE STABILITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON COMPOUNDS; SOLIDS; THERMODYNAMIC STABILITY; THIN FILM DEVICES; THIN FILMS;

AMORPHOUS PHASE; ANNEALING PROCESSES; CHEMICAL VAPOR DEPOSITED; CU ATOMS; ELECTROMIGRATION TESTS; FLOW RATIOS; HIGH TEMPERATURES; INTER DIFFUSIONS; METALLURGICAL PROPERTIES; NANOSTRUCTURED; NOMARSKI MICROSCOPES; PECVD; THERMAL STABILITY; TIME TO FAILURES; W-B-N;

PLASMA STABILITY;

EID: 21544465353     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.284664     Document Type: Conference Paper

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