Near-field photoluminescence of Si-doped GaAs

Optical Review

Volumn 3, Issue 6, 1996, Pages 450-453

  Eah, Sang Kee ^a   Jhe, Wonho ^a   Saiki, Toshiharu ^b   Ohtsu, Motoichi ^b,c  

^a Seoul National University   (South Korea)

^b KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

^c Tokyo Institute of Technology ^*  (Japan)

Author keywords

Fabry Perot effect; GaAs; Near field scanning optical microscopy; Photoluminescence

Indexed keywords

EID: 21444460184     PISSN: 13406000     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02932045     Document Type: Article

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