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Volumn 367, Issue 1-2, 2000, Pages 227-231
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Local order of Te impurity atoms and free electron concentration in heavily doped GaAs:Te
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Author keywords
GaAs:Te solid solution; Heavily doped semiconductors; Local order of impurities; X ray diffuse scattering
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Indexed keywords
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EID: 21444447532
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(00)00695-7 Document Type: Article |
Times cited : (3)
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References (13)
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