Interpretation of anomalous temperature dependence of anti-Stokes photoluminescence at GaInP2/GaAs interface

Applied Physics Letters

Volumn 84, Issue 13, 2004, Pages 2280-2282

  Xu, S J ^a   Li, Q ^a   Dong, J R ^b   Chua, S J ^b  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; INTERFACES (MATERIALS); MATHEMATICAL MODELS; PHOTOLUMINESCENCE; PHOTONS; THERMAL EFFECTS;

ANTI-STOKES PHOTOLUMINESCENCE (ASPL); RADIATIVE RECOMBINATION; TEMPERATURE-INDUCED BLUESHIFT; THERMAL CARRIER REDISTRIBUTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 2142770329     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1691496     Document Type: Article

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