Effect of light intensity and temperature on the recombination mechanism in a-(Ge20Se80)99.5Cu0.5 thin film

Journal of Physics D: Applied Physics

Volumn 38, Issue 12, 2005, Pages 1959-1965

  Thakur, A ^a   Sharma, V ^a   Saini, G S S ^a   Goyal, N ^a   Tripathi, S K ^a  

^a PANJAB UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTANCE; EVAPORATION; MOLECULAR DYNAMICS; PHOTOCONDUCTIVITY; PHOTOCURRENTS; VACUUM;

LIGHT INTENSITY; PHOTOGENERATED CHARGE CARRIERS; RECOMBINATION MECHANISM; TRAP-CONTROLLED RECOMBINATION;

THIN FILMS;

EID: 21244491615     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/38/12/016     Document Type: Article

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