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Volumn 44, Issue 4 B, 2005, Pages 2195-2197
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Evaluations of scaling properties for Ge on insulator MOSFETs in nano-scale
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Author keywords
Germanium MOSFET; Monte Carlo; Nano Scale; Scaling Properties
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Indexed keywords
CARRIER MOBILITY;
CMOS INTEGRATED CIRCUITS;
COMPUTER SIMULATION;
LEAKAGE CURRENTS;
MONTE CARLO METHODS;
MOSFET DEVICES;
OPTIMIZATION;
SURFACE ROUGHNESS;
GERMANIUM MOSFET;
MONTE CARLO;
NANO-SCALE;
SCALING PROPERTIES;
GERMANIUM;
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EID: 21244452731
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.44.2195 Document Type: Conference Paper |
Times cited : (2)
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References (11)
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