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Volumn 44, Issue 4 B, 2005, Pages 2195-2197

Evaluations of scaling properties for Ge on insulator MOSFETs in nano-scale

Author keywords

Germanium MOSFET; Monte Carlo; Nano Scale; Scaling Properties

Indexed keywords

CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; LEAKAGE CURRENTS; MONTE CARLO METHODS; MOSFET DEVICES; OPTIMIZATION; SURFACE ROUGHNESS;

EID: 21244452731     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2195     Document Type: Conference Paper
Times cited : (2)

References (11)
  • 5
    • 16244393547 scopus 로고    scopus 로고
    • A. Rahman et al.: IEDM (2003) p. 471.
    • (2003) IEDM , pp. 471
    • Rahman, A.1
  • 6
    • 16244369610 scopus 로고    scopus 로고
    • T. Low et al.: IEDM (2003) p. 691.
    • (2003) IEDM , pp. 691
    • Low, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.