A nonvolatile memory based on reversible phase changes between fcc and hcp

IEEE Electron Device Letters

Volumn 26, Issue 5, 2005, Pages 286-288

  Ahn, Dong Ho ^a   Kang, Dae Hwan ^b   Cheong, Byung Ki ^b   Kwon, Hyuk Soon ^a   Kwon, Min Ho ^a   Lee, Tae Yeon ^a   Jeong, Jeung Hyun ^b   Lee, Taek Sung ^b   Kim, In Ho ^b   Kim, Ki Bum ^a  

^a Seoul National University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

Amorphous semiconductor; Chalcogenide; Non volatile memory; Phase transformation; Phase change memory (PCM)

Indexed keywords

AMORPHOUS MATERIALS; CRYSTALLIZATION; PHASE TRANSITIONS; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS SEMICONDUCTOR; CHALCOGENIDE; PHASE CHANGE MEMORY;

NONVOLATILE STORAGE;

EID: 21044437184     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.846576     Document Type: Article

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