Performance and reliability of high-power 670-690 nm CW laser diode bars grown by solid source molecular beam epitaxy

Optics InfoBase Conference Papers

Volumn , Issue , 1999, Pages 10-12

  Corvini, P J ^a   Bournes, P A ^a   Fang, F ^a   Finander, M ^a   Jansen, M ^a   Nabiev, R F ^a   Widman, M ^a   Orsila, S ^b   Saarinen, M ^b   Salokatve, A ^b   Savolainen, P ^b   Toivonen, M ^b   Uusimaa, P ^b  

^a Coherent Semiconductor Group ^*  (United States)

^b Nordic Epitaxy   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 21044432286     PISSN: None     EISSN: 21622701     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. J.N. Baillargeon, A.Y. Cho, and R.J. Fischer, J. Vac. Sci. Technol. 13, 64 (1995).
2. M. Pessa, M. Toivonen, M. Jalonen, P. Savolainen, and A. Salokatve, Thin Solid Films 306, 237 (1997).
3. S. Orsila, M. Toivonen, P. Savolainen, V. Vilokkinen, P. Melanen, M. Pessa, M. Saarinen, P. Uusimaa, P. Corvini, F. Fang, M. Jansen, and R. Nabiev, Photonics West '99, San Jose, California, SPIE Proceedings 3628-25 (1999).
4. M. Toivonen, M. Jalonen, A. Salokatve, J. Nappi, P. Savolainen, M. Pessa, and H. Asonen, Appl. Phys. Lett. 61, 2332 (1995).
5. P. Savolainen, M. Toivonen, M. Pessa, P. Corvini, M. Jansen, and R.F. Nabiev, "Red lasers grown by all-solid-source molecular beam epitaxy," accepted for Semicon. Sci. Tech. (1999).