Microcrack-free epitaxy of thick YBa2Cu3O 7-δ films on vicinal r-cut sapphire buffered with CeO 2

Applied Physics Letters

Volumn 86, Issue 19, 2005, Pages 1-3

  Nie, J C ^a,b   Yamasaki, H ^b   Nakagawa, Y ^b   Develos Bagarinao, K ^b   Murugesan, M ^b   Obara, H ^b   Mawatari, Y ^b  

^a BEIJING NORMAL UNIVERSITY   (China)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CERIUM COMPOUNDS; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; METALLIC FILMS; MICROCRACKS; PULSED LASER DEPOSITION; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; STRAIN RATE; THICKNESS MEASUREMENT;

FILM THICKNESS; LATTICE UNITS; STRAIN-RELIEVING; THERMAL STRAIN;

YTTRIUM COMPOUNDS;

EID: 20944437765     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1926415     Document Type: Article

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