Carrier-density-dependent electron effective mass in Zn 1-xMnxSe for 0≤x≤0.13

Applied Physics Letters

Volumn 86, Issue 18, 2005, Pages 1-3

  Agarwal, K C ^a   Daniel, B ^a   Grun M ^a   Feinaugle P ^a   Klingshirn, C ^a   Hetterich, M ^a  

^a UNIVERSITY OF KARLSRUHE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHLORINE; ELECTRONS; MANGANESE; OSCILLATORS (ELECTRONIC); PHONONS; SELENIUM; SEMICONDUCTOR DOPING;

DOPING CONCENTRATION; EPILAYERS; MULTIOSCILLATORS; OPTICAL PHONONS;

ZINC COMPOUNDS;

EID: 20844445794     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1924867     Document Type: Article

References (21)

1. M. A. Haase, J. Qiu, J. M. DePuydt, and H. Cheng, Appl. Phys. Lett. 59, 1272 (1991).
2. M. Klude and D. Hommel, Appl. Phys. Lett. 79, 2523 (2001).
3. H. Luo and J. Furdyna, Semicond. Sci. Technol. 10, 1041 (1995).
4. R. Fiederling, M. Keim, G. Reuscher, W. Ossau, G. Schmidt, A. Waag, and L. W. Molenkamp, Nature (London) 402, 787 (1999).
5. B. T. Jonker, Y. D. Park, B. R. Bennett, H. D. Cheong, G. Kioseoglou, and A. Petrou, Phys. Rev. B 62, 8180 (2000).
6. Michael Oestreich, Nature (London) 402, 735 (1999).
7. Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology, edited by, U. Rössler, Vol. III/41B (Springer, Berlin, 1999).
8. M. Hetterich, B. Daniel, C. Klingshirn, P. Pfundstein, D. Litvinov, D. Gerthsen, K. Eichhorn, and D. Spemann, Phys. Status Solidi C, 1 649 (2004).
9. L. A. Kolodziejski, R. L. Gunshor, T. C. Bonsett, R. Venkatasubramanian, S. Datta, R. B. Bylsma, W. M. Becker, and N. Otsuka, Appl. Phys. Lett. 47, 169 (1985).
10. J. Kvietkova, B. Daniel, M. Hetterich, M. Schubert, D. Spemann, D. Litvinov, and D. Gerthsen, Phys. Rev. B 70, 045316 (2004).
11. P. Y. Yu and M. Cardona, Fundamentals of Semiconductors, Springer (Berlin, 1996).
12. T. R. Yang, C. C. Lu, W. C. Chou, Z. C. Feng, and S. J. Chua, Phys. Rev. B 60, 16058 (1999).
13. C. Skierbiszewski, P. Perlin, P. Wisniewski, W. Knap, T. Suski, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager, E. E. Haller, J. F. Geisz, and J. M. Olson, Appl. Phys. Lett. 76, 2409 (2000).
14. E. O. Kane, J. Phys. Chem. Solids 1, 249 (1957).
15. P. Lawaetz, Phys. Rev. B 4, 3460 (1971).
16. C. S. Wang and B. M. Klein, Phys. Rev. B 24, 3393 (1981).
17. T. Ohyama, E. Otsuka, T. Yoshida, M. Isshiki, and K. Igaki, Jpn. J. Appl. Phys., Part 2 23, L382 (1984).
18. Y. Imanaka, N. Miura, and H. Kukimoto, Phys. Rev. B 49, 16965 (1994).
19. T. Hofmann and M. Schubert (unpublished).
20. B. Daniel, K. C. Agarwal, C. Klingshirn, and M. Hetterich, Proc. 27th Int. Conf. Phys. Semicond. (ICPS-27), Flagstaff, AZ (in press).
21. S. M. Sze, Physics of Semiconductors Devices, 2nd ed. (Wiley, New York, 1981), pp. 28-29.