Metal-oxide-semiconductor capacitors fabricated by layer-by-layer nanoassembly and microfabrication

Journal of Nanoscience and Nanotechnology

Volumn 5, Issue 2, 2005, Pages 192-197

  Liu, Yuxin ^a   Cui, Tianhong ^b  

^a LOUISIANA TECH UNIVERSITY   (United States)

^b University of Minnesota   (United States)

Author keywords

Capacitors; Layer by Layer Assembly; Metal Oxide Semiconductor; Nanoassembly

Indexed keywords

LAYER BY LAYER ASSEMBLY; NANOASSEMBLY; SELF-ASSEMBLED THIN FILMS; SILICA INSULATION LAYERS;

ATOMIC FORCE MICROSCOPY; FABRICATION; INSULATION; NANOTECHNOLOGY; SELF ASSEMBLY; SEMICONDUCTOR DEVICES; SILICA; THIN FILMS;

MOS CAPACITORS;

METAL; NANOTUBE; OXIDE; SILICON; SILICON DIOXIDE;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; ECONOMICS; METHODOLOGY; NANOTECHNOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR; TEMPERATURE; TIME; ULTRASTRUCTURE;

METALS; MICROSCOPY, ATOMIC FORCE; MICROSCOPY, ELECTRON, SCANNING; NANOTECHNOLOGY; NANOTUBES; OXIDES; SEMICONDUCTORS; SILICON; SILICON DIOXIDE; TEMPERATURE; TIME FACTORS;

EID: 20544436971     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2005.038     Document Type: Article

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