Preparation and properties of V-doped (Bi,Nd)4Ti 3O12 ferroelectric thin films by chemical solution deposition method

Integrated Ferroelectrics

Volumn 62, Issue , 2004, Pages 233-241

  Hayashi, Takashi ^a   Iizawa, Naoya ^a   Togawa, Daichi ^a   Yamada, Mio ^b   Sakamoto, Wataru ^b   Kikuta, Koichi ^b   Yogo, Toshinobu ^b   Hirano, Shin Ichi ^b  

^a SHONAN INSTITUTE OF TECHNOLOGY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

(bi,Nd)4Ti3O12; Chemical solution deposition; Fatigue endurance; Ferroelectric properties; Vanadium doping

Indexed keywords

CRYSTALLIZATION; DEPOSITION; GRAIN SIZE AND SHAPE; HYSTERESIS; LEAKAGE CURRENTS; MICROSTRUCTURE; SOLUTIONS; THIN FILMS;

(BI,ND)4TI3O12; CHEMICAL SOLUTION DEPOSITION; FATIGUE ENDURANCE; FERROELECTRIC PROPERTIES; VANADIUM DOPING;

FERROELECTRIC MATERIALS;

EID: 20444443729     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580490458216     Document Type: Article

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