Antiferromagnetic transition and electrical conductivity in α-Gd 2S3

Journal of Physics and Chemistry of Solids

Volumn 65, Issue 6, 2004, Pages 1113-1120

  Ebisu, Shuji ^a   Iijima, Yuji ^a   Iwasa, Taku ^a   Nagata, Shoichi ^a  

^a MURORAN INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A. Chalcogenides; A. Inorganic compounds; D. Crystal structure; D. Electrical conductivity; D. Magnetic properties

Indexed keywords

ACTIVATION ENERGY; ANTIFERROMAGNETIC MATERIALS; CRYSTAL STRUCTURE; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; MAGNETIC SUSCEPTIBILITY; PHASE TRANSITIONS; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

ANTIFERROMAGNETIC TRANSITION; BOHR MAGNETRON NUMBERS; CHALCOGENIDES; CURIE TEMPERATURE;

GADOLINIUM COMPOUNDS;

EID: 2042506356     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2003.12.002     Document Type: Article

References (25)

1. Flahaut M.J., Guittard M.M., Loriers M.J., Patrie M.M. C.R. Acad. Sci. 245:1957;2291.
2. Picon M., Domange L., Flahaut J., Guittard M., Patrie M. Bull. Soc. Chim. France. 2:1960;221.
3. Sleight A.W., Prewitt C.T. Inorg. Chem. 7:1968;2282.
4. Prewitt C.T., Sleight A.W. Inorg. Chem. 7:1968;1090.
5. Zachariasen W.H. Acta Crystallogr. 2:1949;57.
6. Andrianov D.G., Drozdov S.A., Lazareva G.V., Ponomarev N.M., Fistul' V.I. Sov. J. Low Temp. Phys. 3:1977;241.
7. Andrianov D.G., Drozdov S.A., Lazareva G.V., Ponomarev N.M. Sov. Phys. JETP. 48:1978;1122.
8. Andrianov D.G., Drozdov S.A., Lazareva G.V. Sov. Phys. - Solid State. 21:1979;1253.
9. von Molnár S., Holtzberg F., McGuire T.R., Popma T.J.A. AIP Conf. Proc. 5:1971;869.
10. Becker G., Feldhaus J., Westerholt K., Methfessel S. J. Magn. Magn. Mater. 6:1977;14.
11. von Molnár S., Holtzberg F. J. Appl. Phys. 55:1984;2317.
12. Penney T., Holtzberg F., Tao L.J., von Molnár S. AIP Conf. Proc. 18:1973;908.
13. Kimura S., Sato Y., Suzuki T., Ikezawa M. Physica B. 206/207:1995;786.
14. Kasuya T., Suzuki T. J. Appl. Phys. 76:1994;6934.
15. Andrianov D.G., Borodulenko G.P., Grizik A.A., Drozdov S.A., Fistul' V.I. Sov. Phys. - Solid State. 17:1975;1199.
16. Peshev P., Piekarczyk W., Gazda S. Mater. Res. Bull. 6:1971;479.
17. Piekarczyk W., Peshev P. J. Cryst. Growth. 6:1970;357.
18. Kijima N., Morie K., Chikazawa S., Nishihara H., Nagata S. J. Solid State Chem. 142:1999;57.
19. Izumi F., Ikeda T. Mater. Sci. Forum. 321-324:2000;198.
20. Shannon R.D. Acta Crystallogr. A. 32:1976;751.
21. Mott N.F. J. Non-Cryst. Solids. 1:1968;1.
22. Mott N.F., Davis E.A. Electronic Processes in Noncrystalline Materials. second ed. 1979;Clarendon Press, Oxford.
23. Shklovskii B.I., Efros A.L. Electronic Properties of Doped Semiconductors. second ed. 1984;Springer, Berlin.
24. Skal A.S., Shklovskii B.I. Sov. Phys. - Solid State. 16:1974;1190.
25. Ebisu S., Sogabe T., Hayashi M., Nagata S. J. Phys. Chem. Solids. 61:2000;869.