Electrical resistivity in carrier-doped RNb3O9 (R = La, Ce, Pr and Nd)

Journal of Physics and Chemistry of Solids

Volumn 61, Issue 6, 2000, Pages 869-874

  Ebisu, S ^a   Sogabe, T ^a   Hayashi, M ^a   Nagata, S ^a  

^a MURORAN INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC CONDUCTIVITY OF SOLIDS; POLYCRYSTALLINE MATERIALS; THERMAL EFFECTS;

MOTT VARIABLE RANGE HOPPING CONDUCTIVITY; RARE EARTH NIOBATE;

RARE EARTH COMPOUNDS;

EID: 0033893431     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3697(99)00399-6     Document Type: Article

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