Enhanced electron emission from phosphorus- and boron-doped diamond-clad Si field emitter arrays

Thin Solid Films

Volumn 290-291, Issue , 1996, Pages 176-180

  Ku, T K ^a   Chen, S H ^a   Yang, C D ^a   She, N J ^a   Tarntair, F G ^a   Wang, C C ^a   Chen, C F ^a   Hsieh, I J ^b   Cheng, H C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b CHUNG HUA UNIVERSITY   (Taiwan)

Author keywords

Diamond clad Silicon tips; Effective work function; Field emission; Field emitter arrays

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRON EMISSION; MORPHOLOGY; PHOSPHORUS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON;

MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION;

DIAMOND FILMS;

EID: 2042482953     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09068-2     Document Type: Article

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