메뉴 건너뛰기




Volumn 5, Issue 6-8, 1996, Pages 766-770

The synthesis and characterization of phosphorus-doped diamond films using trimethyl-phosphite as a dopping source

Author keywords

Fourier transform infrared spectroscopy (FTIR); P doped diamond films; Trimethyl phosphite; XRD characteristic

Indexed keywords


EID: 0042355289     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/0925-9635(95)00480-7     Document Type: Article
Times cited : (12)

References (15)
  • 8
    • 0042618735 scopus 로고
    • Growth of device-quality homoepitaxial diamond thin films
    • Boston MA
    • M.W. Geis, Growth of Device-quality Homoepitaxial Diamond Thin Films, in Proc. Fall 1989, MRS Meeting, Vol. 162, Boston MA, 1989, p.15.
    • (1989) Proc. Fall 1989, MRS Meeting , vol.162 , pp. 15
    • Geis, M.W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.