Optical and electrical characterization of SiC devices

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 1257-1260

  Raffaelle, Ryne P ^a   Bailey, Sheila G ^b   Neudeck, Phillip ^b   Okojie, Robert ^b   Schnabel, C M ^c   Tabib Azar, M ^c   Scheiman, Dave ^d   Jenkins, Phillip ^d   Hubbard, Seth ^e  

^a ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

^c CASE WESTERN RESERVE UNIVERSITY   (United States)

^d OHIO AEROSPACE INSTITUTE   (United States)

^e UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; SILICON CARBIDE; SOLAR CELLS;

ASSOCIATED ELECTRONICS; CRYSTALLINE DEFECTS; DIELECTRIC STRENGTHS; HARSH ENVIRONMENT; HIGH TEMPERATURE; OPTICAL AND ELECTRICAL CHARACTERIZATION; RADIATION RESISTANCE; SYNTHESIS AND CHARACTERIZATIONS;

DEFECTS;

EID: 20344404385     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.916118     Document Type: Conference Paper

References (10)

1. P.G. Neudeck, J. Electron. Mater. 24, 283 (1995).
2. M. Bhatnagar and B.J. Baliga, IEEE Trans. on Electron Devices 40, 645 (1993).
3. D.A. Scheiman, G.A. Landis, and V.G. Weizer, Space Technology and Applications International Forum, AIP Proc. 453 (1999).
4. P.G. Neudeck, W. Huang, and M. Dudley, in Power Semiconductor Materials and Devices, (MRS, Warrendale, PA 1998), Vol. 483, pp. 285-384.
5. P.G. Neudeck and J.A. Powell, IEEE Electron Device Left 15, 63 (1994)
6. P.G. Neudeck, W. Huang, and M. Dudley, IEEE Trans. Electron Devices 46, 478 (1999).
7. G. Nomarski, French Patents Nos. 1059124 and 1056361.
8. D.K. Schroder, Semiconductor Material and Device Characterization (John Wiley & Sons, NY, NY 1990), pp.391-394.
9. D. Defives, O. Noblanc, C. Dua, C. Brylinski, M. Barthula, V. Aubry-Fortuna, and F. Meyer, IEEE Trans.on Electron Dev. 46, 449 (1999).
10. nd edition, pp.248-249.