High frequency characterization for the single-walled carbon nanorubes using S-parameter

2004 4th IEEE Conference on Nanotechnology

Volumn , Issue , 2004, Pages 107-109

  Zhang, M ^a   Huo, X ^a   Liang, Q ^a   Tang, Z K ^a   Chan, Philip C H ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Carbon Nanotube; High frequency; Nanotechnology; Semiconductor devices

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIGITAL TO ANALOG CONVERSION; ELECTRIC NETWORK ANALYZERS; INDUCTANCE; MAGNETIC FIELD EFFECTS; NANOTECHNOLOGY; NATURAL FREQUENCIES; OPTIMIZATION; SEMICONDUCTOR DEVICES;

HIGH FREQUENCIES; NANO-SCALE; NANO-SYSTEMS; NANOELECTRONICS;

CARBON NANOTUBES;

EID: 20344401114     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. P.L.Mceuen et. al., "Single-walled carbon nanotube electronics" IEEE Trans. Nanotechnology, vol. 1, no. 1, pp. 78-85, March 2002.
2. P.J.Burke, "An RF circuit model for carbon nanotubes" IEEE Trans. Nanotechnology, vol. 2, no. 1, pp. 55-57, March 2003.
3. J.Kong et.al., "Synthesis of individual single-walled carbon nanotubes on patterned silicon wafers" Nature, 395, pp. 878-881, 1998.
4. A.Jorio et. al., "Structural (n, m) determination of isolated single-wall carbon nanotubes by resonant raman scattering" Physical Review Letter, vol. 86, pp. 1118, 2001.