Laser direct write for release of SiO2 MEMS and nano-scale devices

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5662, Issue , 2004, Pages 543-550

  Abraham, Meg ^a   Helvajian, Henry ^a  

^a AEROSPACE CORPORATION   (United States)

Author keywords

3D; Ceramic; Direct write; Glass; Laser; Machining; Nanotechnology; SiO2

Indexed keywords

ANNEALING; CERAMIC MATERIALS; ETCHING; HIGH TEMPERATURE EFFECTS; LIGHT ABSORPTION; MICROELECTROMECHANICAL DEVICES; MIXTURES; NANOTECHNOLOGY; PHOTONS; SILICA; THIN FILMS; THREE DIMENSIONAL; XENON;

LASER DIRECT WRITE PROCESSING; MICROFABRICATION; NANO-SCALE DEVICES; PATTERNED STRUCTURES;

LASER BEAM EFFECTS;

EID: 20344392176     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.596553     Document Type: Conference Paper

References (6)

1. Ehrlich, D. J, Osgood, R.M., Jr., Deutsch, T.F., Laser Chemical Techniques for Rapid Direct Writing of Surface Relief in Silicon. Appl. Phys. Lette. 38 1018-1020. 1981
2. D. Bäuerle. "Laser Processing and Chemestry" Third Edition, Springer, 2000
3. Meg Abraham in MRS Spring 2004 - session R (in Print)
4. David Kirkwood. Buried oxide sharpens dopant profile, "EETimes" September 23, 2002
5. D. K. Sadana and M. I. Current, "Fabrication of SOI Wafers Using Ion Implantation" in Ion Implantation Science and Technology, 2000.
6. J. Blake, K. Dempsey, R. Dolan, Y. Erokhin, P. Powell, S. Richards "300 mm Ultra-Thin Advantox TM MLD SI-MOX Wafers Manufactured Using i2000 Oxygen Implanter" SOI Conference 2002