300 mm ultra-thin Advantox™ MLD SIMOX wafers manufactured using i2000 oxygen implanter

IEEE International SOI Conference

Volumn , Issue , 2002, Pages 109-110

  Blake, J ^a   Dempsey, K ^a   Dolan, R ^a   Erokhin, Y ^a   Powell, P ^a   Richards, S ^a  

^a Ibis Technology Corp   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; ION IMPLANTATION; SILICON ON INSULATOR TECHNOLOGY;

OXYGEN IMPLANTERS;

SILICON WAFERS;

EID: 0036454371     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. D. Sadana, "ULSI Process Integration", II, 2001-1, Proceedings of ECS, p.474-488. Ed. C. Claeys, E. Gonzales, J. Murota, K. Saraswat.
2. M.M. Pelella et al., "Advances and Challenges of High Performance CMOS on SOI", Proceedins of the SOI-2001 Conference, Durango, Colorado, p. 14.
3. R. Chau et al., "A 50 nm Depleted Substrate CMOS Transistor", Proceeding of IEDM-2001 Conference, p. 621.
4. J. Blake, S. Richards, to be presented at the IIT-2002 Conference.
5. D.K. Sadana and M.I. Current, "Fabrication of SOI Wafers Using Ion Implantation" in Ion Implantation Science and Technology, Ed. J.F. Ziegler, 2000, Ion Implantation Technology Co.
6. M.A. Guerra, Materials Science and Engineering, B12 (1992) 145-148.