Insulator-to-metal crossover in the normal state of La2-xSrxCuO4near optimum doping

Physical Review Letters

Volumn 77, Issue 27, 1996, Pages 5417-5420

  Boebinger, G S ^a   Ando, Yoichi ^a   Passner, A ^a   Kimura, T ^b   Okuya, M ^b   Shimoyama, J ^b   Kishio, K ^b   Tamasaku, K ^b   Ichikawa, N ^b   Uchida, S ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MEAN FREE PATH; TWO-DIMENSIONAL MATERIALS; WAVELENGTH; ZERO-FIELD RESISTIVITY;

CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; GROUND STATE; MAGNETIC FIELDS; SUPERCONDUCTIVITY; VECTORS;

LANTHANUM COMPOUNDS;

EID: 20244384150     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.77.5417     Document Type: Article

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