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Volumn 5645, Issue , 2005, Pages 114-121

Improving the performance of E-beam 2nd writing in mask alignment accuracy and pattern faultless for CPL™ technology

Author keywords

Alignment; Alignment mark; Chromeless PSM; CPL ; E beam 2nd writing; Phase shifting mask; PSM

Indexed keywords

ALIGNMENT; COATINGS; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; ETCHING; FUNCTIONS; LIGHT TRANSMISSION; MASKS; OPTIMIZATION; PHASE SHIFT; SCANNING ELECTRON MICROSCOPY;

EID: 20044366225     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.576542     Document Type: Conference Paper
Times cited : (1)

References (2)
  • 1
    • 1642474048 scopus 로고    scopus 로고
    • Investigation of phase variation impact on CPL PSM for Low K1 imaging
    • Chun-hung Lin et. al., "Investigation of Phase Variation Impact on CPL PSM for Low K1 Imaging" SPIE Vol. 5130
    • SPIE , vol.5130
    • Lin, C.-H.1
  • 2
    • 20044392417 scopus 로고    scopus 로고
    • Low K1 lithography patterning options for the 90nm and 65nm nodes
    • Stephen D. Hsu et. al., "Low K1 Lithography Patterning Options for the 90nm and 65nm Nodes" SPIE Vol. 5130
    • SPIE , vol.5130
    • Hsu, S.D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.