Mass spectrometric study of retarded vaporization of silicon based fibres: Origin of their thermal stability

Key Engineering Materials

Volumn , Issue 136 PART 3, 1997, Pages 1954-1957

  Chatillon, C ^a   Rocabois, Ph ^b   Bernard, C ^a  

^a UNIV GRENOBLE ALPES   (France)

^b IRSID   (France)

Author keywords

Evaporation coefficients; Free vaporization; Knudsen cell; Langmuir vaporization; Mass spectrometry; Si C, Si O, Si N systems; SiC, SiO2, Si3N4 compounds

Indexed keywords

CARBON; COMPOSITION; ENTROPY; EVAPORATION; INTERFACES (MATERIALS); MASS SPECTROMETRY; SILICA; SILICON; SILICON CARBIDE; SILICON NITRIDE; VAPORIZATION;

ENTROPY BARRIER; EVAPORATION COEFFICIENT; FREE VAPORIZATION; KNUDSEN CELL; LANGMUIR VAPORIZATION; MULTIPLE EFFUSION CELL TECHNIQUE;

CERAMIC FIBERS;

EID: 19944379135     PISSN: 10139826     EISSN: 16629795     Source Type: Book Series    
DOI: None     Document Type: Article

References (10)

1. R.C. Paule, J.L. Margrave, in: Characterization of High Temperature Vapors (Wiley, New-York, 1967) Ch. 6, pp.130-151.
2. G.M. Rosenblatt, in: Evaporation from Solids, Treative on Solid-State Chemistry, Vol. VI, Surfaces, Ed. N.B. Hannay (Plenum, New-York, 1976) Chap. 3, pp.165-239.
3. R.G. Behrens, G.H. Rinehart, in: Characterization of High Temperature Vapors and Gases, NBS Special Publication 561/1 (1979, Gaithersburg, MD: National Institute of Standards and Technology) pp.125-142.
4. R.N. Ghoshtagore, Sol. State Electron. 9 (1996) 178-180.
5. M. Hoch, W. Jamieson, M. Yamawaki, Proc. Int. Conf. Chem. Thermodynamics, Baden near Vienna, Austria 3rd, 6 [9] (1973) 92-98.
6. Ph. Rocabois, C. Chatillon, C. Bernard, J. Am. Ceram. Soc. 79 [5] (1996) 1351-1360.
7. Ph. Rocabois, C. Chatillon, C. Bernard, Rev. Int. Hautes Temp. Refract., 28 (1992-93) 37-48.
8. Ph. Rocabois, C. Chatillon, C. Bernard, High Temp. High Press. 27/28 (1995-96) 3-23.
9. K. Motzfeld, J. Phys. Chem., 59 [4] (1955) 139-147.
10. C. Chatillon, Ph. Rocabois, C. Bernard, "High Temperature Multiple Knudsen cell mass spectrometric analysis of silicon based materials thermal degradation. I- Binary Si-O, Si-C and Si-N compounds. J. Eur. Ceram. Soc. submitted.