Analytical and numerical calculations of the temperature distribution in Si and Ge targets irradiated by excimer lasers

Applied Surface Science

Volumn 248, Issue 1-4, 2005, Pages 455-460

  Conde, J C ^a   Gonzalez P ^a   Lusquinos F ^a   Chiussi, S ^a   Serra, J ^a   Leon B ^a  

^a UNIVERSITY OF VIGO   (Spain)

Author keywords

Excimer lasers; Finite elements method; Temperature distribution

Indexed keywords

CRYSTALLINE MATERIALS; DIFFERENCE EQUATIONS; ENTHALPY; EXCIMER LASERS; LASER BEAM EFFECTS; MATHEMATICAL MODELS; NUMERICAL ANALYSIS; POLYNOMIALS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SPECIFIC HEAT; TEMPERATURE DISTRIBUTION; THERMAL CONDUCTIVITY;

CRYSTALLINE SILICON MATERIALS; ENERGY DENSITY; KIRCHHOFF TRANSFORMATION METHODS; LASER LIGHTS;

MATERIALS SCIENCE;

EID: 19944364185     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.03.072     Document Type: Conference Paper

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