Atom incorporation at edge defects in clusters

Physical Review Letters

Volumn 93, Issue 17, 2004, Pages

  Wang, Shi Cai ^a   Ehrlich, Gert ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ATOMS; EDGE DETECTION; GROWTH (MATERIALS); IONIZATION; IRIDIUM COMPOUNDS; MICROSCOPIC EXAMINATION; NUMERICAL METHODS; SENSITIVITY ANALYSIS; STRESS ANALYSIS;

ATOM INCORPORATION; CLUSTER EDGES; DEFECT SITES; KINKS;

DEFECTS;

EID: 19744382380     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.93.176101     Document Type: Article

References (13)

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10. We do not consider the mechanism by which incorporation occurs, which can take place either by atom exchange or an atom jump. Only the location of the incorporated atom is examined.
11. Throughout we assume a constant prefactor equal to that in diffusion, and vary the rate of incorporation by changing the height of the activation barrier.
12. A higher incorporation barrier into B-type edges as the cluster size increases has already been reported in reference [2].
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