New probe of the electronic structure of amorphous materials

Physical Review Letters

Volumn 93, Issue 20, 2004, Pages

  Stromme, Maria ^a   Ahuja, Rajeev ^b   Niklasson, Gunnar A ^a  

^a UPPSALA UNIVERSITY   (Sweden)

^b UPPSALA UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; APPROXIMATION THEORY; BAND STRUCTURE; CRYSTALLINE MATERIALS; CURVE FITTING; EIGENVALUES AND EIGENFUNCTIONS; ELECTROCHEMICAL ELECTRODES; ELECTROCHEMISTRY; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; FUNCTIONS; MATHEMATICAL MODELS; SPUTTER DEPOSITION; TITANIUM DIOXIDE; TUNGSTEN COMPOUNDS; X RAY SPECTROSCOPY;

ELECTROCHEMICAL DENSITY OF STATES; INTERCALATION SPECTROSCOPY; LOCAL-DENSITY APPROXIMATION (LDA); X-RAY AMORPHOUS THIN FILMS;

ELECTRONIC STRUCTURE;

EID: 19744371258     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.93.206403     Document Type: Article

References (39)

1. T. Saito et al., Science 300, 464 (2003).
2. H.W. Hugosson et al., Science 293, 2434 (2001).
3. L. S. Dubrovinsky et al., Nature (London) 410, 653 (2001).
4. P. Sharma et al., Nat. Mater. 2, 673 (2003).
5. G. A. de Wijs and R. A. de Groot, Phys. Rev. B 60, 16 463 (1999).
6. N. F. Mott and E. A. Davis, Electronic Processes in Non-Crystalline Materials (Clarendon, Oxford, 1971).
7. S. R. Elliott, Physics of Amorphous Materials (Longman, London, 1984).
8. I. Pollini, A. Mosser, and J. C. Parlebas, Phys. Rep. 355, 1 (2001).
9. C. Main et al., Solid State Commun. 83, 401 (1992).
10. J. D. Cohen, D.V. Lang, and J. P. Harbison, Phys. Rev. Lett. 45, 197 (1980).
11. G. D. Cody, T. Tiedje, B. Abeles, B. Brooks, and Y. Goldstein, Phys. Rev. Lett. 47, 1480 (1981).
12. C.G. Granqvist, Handbook of Inorganic Electrochromic Materials (Elsevier, Amsterdam, 2002), 2nd ed.
13. C. Bechinger et al., Nature (London) 383, 608 (1996).
14. M. Grätzel, Nature (London) 409, 575 (2001).
15. M. Wagemaker, A.P.M. Kentgens, and EM. Mulder, Nature (London) 418, 397 (2002).
16. 3:Sn substrates in an atmosphere of argon and oxygen. The total pressure during sputtering was 30 mTorr for the case of tungsten and 60 mTorr for the case of titanium. The oxygen/argon ratios in the gas were 1.25 and 0.086, respectively. Other details about the sputtering conditions are given in A. Azens et al., Appl. Phys. Lett. 68, 3701 (1996); J. Appl. Phys. 78, 1968 (1995). For comparison purposes, films of crystalline tungsten trioxide were deposited by heating the substrates to 350 °C during the deposition.
17. 3:Sn substrates in an atmosphere of argon and oxygen. The total pressure during sputtering was 30 mTorr for the case of tungsten and 60 mTorr for the case of titanium. The oxygen/argon ratios in the gas were 1.25 and 0.086, respectively. Other details about the sputtering conditions are given in A. Azens et al., Appl. Phys. Lett. 68, 3701 (1996); J. Appl. Phys. 78, 1968 (1995). For comparison purposes, films of crystalline tungsten trioxide were deposited by heating the substrates to 350 °C during the deposition.
18. 3:Sn substrates in an atmosphere of argon and oxygen. The total pressure during sputtering was 30 mTorr for the case of tungsten and 60 mTorr for the case of titanium. The oxygen/argon ratios in the gas were 1.25 and 0.086, respectively. Other details about the sputtering conditions are given in A. Azens et al., Appl. Phys. Lett. 68, 3701 (1996); J. Appl. Phys. 78, 1968 (1995). For comparison purposes, films of crystalline tungsten trioxide were deposited by heating the substrates to 350 °C during the deposition.
19. 3:Sn substrates in an atmosphere of argon and oxygen. The total pressure during sputtering was 30 mTorr for the case of tungsten and 60 mTorr for the case of titanium. The oxygen/argon ratios in the gas were 1.25 and 0.086, respectively. Other details about the sputtering conditions are given in A. Azens et al., Appl. Phys. Lett. 68, 3701 (1996); J. Appl. Phys. 78, 1968 (1995). For comparison purposes, films of crystalline tungsten trioxide were deposited by heating the substrates to 350 °C during the deposition.
20. α cathode, showed that the films deposited onto unheated substrates were x-ray amorphous, while the crystalline tungsten trioxide films were found to be monoclinic with a grain size of ∼50 nm, as obtained from peak profile fittings using Scherrer's equation [18].
21. M. Strømme Mattsson, Phys. Rev. B 58, 11015 (1998).
22. L.S. Dubrovinsky et al., Nature (London) 388, 362 (1997).
23. J. M. Wills and B. R. Cooper, Phys. Rev. B 36, 3809 (1987).
24. D. L Price and B. R Cooper, Phys. Rev. B 39, 4945 (1989).
25. L. Hedin and B. I. Lundqvist, J. Phys. C 4, 2064 (1971).
26. D. M. Ceperley and B. J. Alder, Phys. Rev. Lett. 45, 566 (1980); J. P. Perdew and A. Zunger, Phys. Rev. B 23, 5048 (1981).
27. D. M. Ceperley and B. J. Alder, Phys. Rev. Lett. 45, 566 (1980); J. P. Perdew and A. Zunger, Phys. Rev. B 23, 5048 (1981).
28. O. K. Andersen, Phys. Rev. B 12, 3060 (1975).
29. H. L. Skriver, The LMTO Method (Springer, Berlin, 1984).
30. D. J. Chadi and M. L. Cohen, Phys. Rev. B 8, 5747 (1973).
31. S. Froyen, Phys. Rev. B 39, 3168 (1989).
32. Q. Zhong, J. R. Dahn, and K. Colbow, Phys. Rev. B 46, 2554 (1992).
33. W. Kohn, Rev. Mod. Phys. 71, 1253 (1999).
34. U. von Barth, Phys. Scr. T109, 9 (2004).
35. W. R. McKinnon, in Solid State Electrochemistry, edited by P. G. Bruce (Cambridge University Press, Cambridge, 1995), pp. 163-198.
36. T. Kudo and M. Hibino, Solid State Ionics 84, 65 (1996).
37. J. Friedel, Adv. Phys. 3, 446 (1954).
38. D. J. Sellmyer, Solid State Phys. 33, 83 (1978).
39. M. K. Aydinol et al., Phys. Rev. B 56, 1354 (1997).