RF-based MOSFET-modeling for resistive mixer design

1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998

Volumn 1998-September, Issue , 1998, Pages 119-123

  Schmidt Von Behren, K ^a   Breuer, V ^a   Klapproth, L ^a   Bock, G ^a   Leipold, D ^b   Schwartz, W ^b   Wiedmann, F ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b Texas Instruments Deutschland GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN; MIXERS (MACHINERY); MOSFET DEVICES; SCATTERING PARAMETERS;

BIAS POINTS; CELLULAR APPLICATIONS; DESIGN PROCESS; MOS-FET; MOSFET MODELING; RESISTIVE MIXER; S-PARAMETER CHARACTERIZATION; TABLE MODELING;

MONOLITHIC INTEGRATED CIRCUITS;

EID: 19544389097     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMIC.1998.750205     Document Type: Conference Paper

References (6)

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3. L. Klapproth, A. Schaefer, G. Boeck, "A Bias Dependent HEMT Noise Model I), International Microwave Symposium Digest, Denver 1997, pp. 881ff.
4. L. Klapproth, M. Tempel, G. Boeck, "A Prugmmmable Load for Noise Chamcterization 'I, 49th ARFTG Conference Digest, ARFTG '97, Denver, pp. 155ff.
5. R. Q. Lane "The determination of device noise pammeters", Proc. IEEE, vol. 57, pp. 1461-1462, 1969
6. J. H. Mikkelsen, T. E. Kolding, T. Larsen "RF CMOS Circuits Target IMT-2000 Applications", Microwaves & RF, July 98, pp. 99ff