Effect of near-ballistic photoelectron transport on resonant plasma-assisted photomixing in high-electron mobility transistors

Semiconductor Science and Technology

Volumn 19, Issue 4 SPEC. ISS., 2004, Pages

  Ryzhii, M ^a   Ryzhii, V ^a   Shur, M S ^b  

^a UNIVERSITY OF AIZU   (Japan)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; FLUXES; GATES (TRANSISTOR); MONTE CARLO METHODS; PLASMA OSCILLATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS;

PHOTOELECTRON TRANSPORT; TERAHERTZ (THZ) RADIATION;

TRANSISTORS;

EID: 1942452393     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/4/026     Document Type: Conference Paper

References (9)

1. Sha W, Smirl A and Tseng W 1995 Phys. Rev. Lett. 74 4273
2. Kersting R, Unterrainer K, Strasser G, Kauffmann H F and Gornik E 1997 Phys. Rev. Lett. 79 3038
3. Ryzhii V, Khmyrova I, Satou A, Vaccaro P O, Aida T and Shur M 2002 J. Appl. Phys. 92 5756
4. Ryzhii V, Khmyrova I and Shur M S 2003 Proc. SPIE 5118 340
5. Dyakonov M and Shur M 1996 IEEE Trans. Electron Devices 43 380
6. Satou A, Khmyrova I, Ryzhii V and Shur M S 2003 Semicond. Sci. Technol. 18 460
7. Ryzhii V, Satou A and Shur M S 2003 J. Appl. Phys. 93 10041
8. Gradsteyn L S and Ryzhik I M 1994 Table of Integrals, Series, and Products (London: Academic)
9. Ryzhii M, Willander M, Khmyrova I and Ryzhii V 1998 J. Appl. Phys. 84 6419