A MOSFET-based model of a Class 2 nerve membrane

IEEE Transactions on Neural Networks

Volumn 16, Issue 3, 2005, Pages 754-773

  Kohno, Takashi ^a   Aihara, Kazuyuki ^a,b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

Class 2 neurons; Hodgkin Huxley equations; Hopf bifurcation; MOSFET circuits; Neuromorphic engineering; Phase plane analysis; Silicon nerve membrane; Silicon neuron

Indexed keywords

BIFURCATION (MATHEMATICS); CELL MEMBRANES; CHAOS THEORY; MATHEMATICAL MODELS; MOSFET DEVICES; NEUROPHYSIOLOGY; NUMERICAL ANALYSIS; SET THEORY;

CLASS 2 NEURONS; HODGKIN-HUXLEY EQUATIONS; HOPF BIFURCATION; MOSFET CIRCUITS; NEUROMORPHIC ENGINEERING; PHASE PLANE ANALYSIS; SILICON NERVE MEMBRANE; SILICON NEURON;

NEURAL NETWORKS;

ACTION POTENTIAL; ARTICLE; BIOLOGICAL MODEL; BIOMIMETICS; CELL MEMBRANE; CELL MEMBRANE POTENTIAL; COMPARATIVE STUDY; COMPUTER SIMULATION; EVALUATION; INSTRUMENTATION; METHODOLOGY; NERVE CELL; PHYSIOLOGY; SEMICONDUCTOR;

ACTION POTENTIALS; BIOMIMETICS; CELL MEMBRANE; COMPUTER SIMULATION; MEMBRANE POTENTIALS; MODELS, NEUROLOGICAL; NEURONS; TRANSISTORS;

EID: 19344371572     PISSN: 10459227     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNN.2005.844855     Document Type: Article

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