Non destructive profile measurements of annealed shallow implants

Materials Research Society Symposium - Proceedings

Volumn 568, Issue , 1999, Pages 239-243

  Borden, Peter ^a   Nijmeijer, Regina ^a   Lingel, Karen ^a  

^a Boxer Cross Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ION IMPLANTATION; RAPID THERMAL ANNEALING; SEMICONDUCTOR DOPING;

NONDESTRUCTIVE PROFILE MEASUREMENT;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0032639199     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-568-239     Document Type: Article

References (3)

1. E. Ishida and S.B. Felch, J. Vac. Sci. Technol. B 14 (1), 397 (1996).
2. th Ultra-shallow junction meeting, 1998.
3. Semiconductor Assessment Services LTD, High Wycombe, Bucks, UK.