Analysis of SiC IMPATT device in millimeter-wave frequencies

Microwave and Optical Technology Letters

Volumn 18, Issue 3, 1998, Pages 167-168

  Meng, C C ^a   Liao, G R ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

IMPATT device; Millimeter wave; Oscillator; SiC

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; HIGH TEMPERATURE EFFECTS; IONIZATION OF SOLIDS; MILLIMETER WAVES; OSCILLATORS (ELECTRONIC); SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE;

LARGE SIGNAL SIMULATION; LUCKY DRIFT MODELS;

IMPATT DIODES;

EID: 18844447470     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1098-2760(19980620)18:3<167::AID-MOP2>3.0.CO;2-D     Document Type: Article

References (6)

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