All-SiC inductively-loaded half-bridge inverter characterization of 4H-SiC power BJTs up to 400V/22 A

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1325-1328

  Luo, Y ^a   Fursin, L ^a   Zhao, J H ^a   Alexandrov, P ^b   Wright, B ^b   Weiner, M ^b  

^a RUTGERS UNIVERSITY   (United States)

^b UNITED SILICON CARBIDE INC   (United States)

Author keywords

Fabrication; Half bridge inverter; Power transistor; SiC

Indexed keywords

ELECTRIC INVERTERS; FABRICATION; POWER BIPOLAR TRANSISTORS; POWER TRANSISTORS; ELECTRIC LOSSES; SILICON CARBIDE; SWITCHING;

DC CHARACTERISTICS; FABRICATION AND CHARACTERIZATIONS; HALF BRIDGE INVERTER; POWER BJTS; POWER-LOSSES; SIC BJT; SWITCHING WAVEFORMS; TURN OFFS; HALF-BRIDGE INVERTERS;

SILICON CARBIDE; BIPOLAR TRANSISTORS;

EID: 18744432008     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1325     Document Type: Conference Paper

References (4)

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4. Y. Tang, J.B. Fedison and T.P. Chow: IEEE Electron Device Letters, Vol. 22 (2001), No.3, p. 119-120.