Comparison of thermal characteristics of antimonide and phosphide MQW lasers

Semiconductor Science and Technology

Volumn 20, Issue 6, 2005, Pages 563-567

  Zhu, C ^a   Zhang, Y G ^a   Li, A Z ^a   Zheng, Y L ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIELECTRIC WAVEGUIDES; FINITE ELEMENT METHOD; PHOSPHORUS COMPOUNDS; SCHEMATIC DIAGRAMS; SEMICONDUCTOR MATERIALS; TEMPERATURE DISTRIBUTION; THERMAL CONDUCTIVITY; THERMODYNAMICS;

ANTIMONIDE; HEAT ACCUMULATION; LASER STRUCTURES; LASING;

QUANTUM WELL LASERS;

EID: 18744412114     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/6/015     Document Type: Article

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