Threshold behavior of the formation of nanometer islands in a Ge/Si(100) system in the presence of Sb

Semiconductors

Volumn 39, Issue 5, 2005, Pages 547-551

  Cirlin, G E ^a   Dubrovskii V G ^b   Tonkikh, A A ^a   Sibirev, N V ^d   Ustinov, V M ^b   Werner, P ^c  

^a INSTITUTE FOR ANALYTICAL INSTRUMENTATION   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 18744402549     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1923563     Document Type: Article

References (13)

1. O. P. Pchelyakov, Yu. B. Bolkhovityanov, A. V. Dvurechenskiǐ, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 1281 (2000)
2. [Semiconductors 34, 1229 (2000)].
3. A. A. Tonkikh, G. E. Cirlin, V. G. Dubrovskiǐ, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 38, 1239 (2004)
4. [Semiconductors 38, 1202 (2004)].
5. I. Berbezier, A. Ronda, A. Portavoce, and N. Motta, Appl. Phys. Lett. 83, 4833 (2003).
6. A. V. Osipov, F. Schmitt, S. A. Kukushkin, and P. Hess, Appl. Surf. Sci. 188, 156 (2002).
7. V. G. Dubrovskiǐ, G. E. Cirlin, and V. M. Ustinov, Phys. Rev. B 68, 075409 (2003).
8. V. G. Dubrovskiǐ, Yu. G. Musikhin, G. E. Cirlin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 38, 342 (2004)
9. [Semiconductors 38, 329 (2004)].
10. V. G. Dubrovskiǐ, G. E. Cirlin, Yu. G. Musikhin, et al., J. Cryst. Growth 267, 47 (2004).
11. D. Kashchiev, Nucleation: Basic Theory with Applications (Butterworth Heinemann, Oxford, 2000).
12. P. Müller and R. Kern, Appl. Surf. Sci. 102, 6 (1996).
13. F. M. Kuni, Preprint No. 84-178.E (ITP, Kiev, 1984).