Atomic-scale details of dislocation-stacking fault tetrahedra interaction

Materials Science and Engineering: A

Volumn 400-401, Issue 1-2 SUPPL., 2005, Pages 370-373

  Osetsky, Yu N ^a   Stoller, R E ^a   Rodney, D ^b   Bacon, D J ^c  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b UNIV GRENOBLE ALPES   (France)

^c UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

Defect free channels; Dislocation; Stacking fault tetrahedra

Indexed keywords

COMPUTER SIMULATION; HARDNESS; METAL ANALYSIS; RADIATION; STRAIN RATE;

ATOMISTIC SIMULATION; RADIATION-INDUCED HARDENING; STACKING FAULT ENERGY; STACKING-FAULT TETRAHEDRA (SFT);

STACKING FAULTS;

DISLOCATION;

EID: 18744393895     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msea.2005.03.038     Document Type: Article

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