A study of on-resistance and switching characteristics of the power MOSFET under cryogenic conditions

International Journal of Electronics

Volumn 87, Issue 1, 2000, Pages 99-106

  Lu, W ^a   Mauriello, R J ^b   Sundaram, K B ^b   Chow, L C ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b University of Central Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC RESISTANCE; ELECTRIC SWITCHES; LOW TEMPERATURE PHENOMENA;

CRYOGENIC COOLING TECHNIQUES;

MOSFET DEVICES;

EID: 18744383315     PISSN: 00207217     EISSN: None     Source Type: Journal    
DOI: 10.1080/002072100132499     Document Type: Article

References (10)

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3. Grant, D.A., and Gowar, J., 1989, Power MOSFETs, Theory and Applications (New York: Wiley), p. 17.
4. Mueller, O., 1989, On resistance, thermal resistance and reverse recovery time of power MOSFETs at 77 K. Cryogenics, 29, 1006-1014.
5. Mueller, O., 1990, Switching losses of the cryogenic MOSFETs and SIT. Cryogenics, 30, 1094-1100.
6. Mueller, O., 1996, Properties of higher power cryo-MOSFETs. Proceedings of the 1996 IEEE Industrial Applications Conference, Piscataway, N.J. (IEEE), pp. 1443-1448.
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10. Uyemura, J.P., 1988, Fundamentals of MOS Digital Integrated Circuits (New York: Addison Wesley), p 203.