Electronic levels of isolated and oxygen-perturbed hydrogen in silicon and migration of hydrogen

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 134-138

  Nielsen, K Bonde ^a   Dobaczewski, L ^b   Sogard S ^a   Nielsen, B Bech ^a  

^a AARHUS UNIVERSITY   (Denmark)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

Deep levels; Hydrogen; Oxygen; Silicon

Indexed keywords

CHEMICAL BONDS; CRYSTAL LATTICES; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; HYDROGEN; SEMICONDUCTING SILICON;

INTERSTITIAL SITES;

ELECTRON ENERGY LEVELS;

EID: 18544409392     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00670-6     Document Type: Article

References (11)

1. Early stages of oxygen precipitation in silicon