Demonstration of Monolithic Dalington Transistors in 4H-SiC

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 789-792

  Tang, Yi ^a   Chow, T Paul ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

4H SiC; Bipolar Transistors; Current Gain; Darlington Transistors

Indexed keywords

ELECTRIC POTENTIAL; INSULATED GATE BIPOLAR TRANSISTORS; REACTIVE ION ETCHING;

CURRENT GAIN;

SILICON CARBIDE;

EID: 18544393164     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (5)

1. Y. Wang, W. Xie, J.A. Cooper, Jr., M.R. Melloch and J.W. Palmour, Silicon Carbide and Related Materials Conf, Kyoto, Japan, (1995), p.809.
2. th Annual Device Research Conference, Denver, CO, June, 2000.
3. C. Huang, J. A. Cooper, International Symposium on Power Semiconductor Devices and ICs, Santa Fe, NM, June, 2002.
4. Y. Tang, J.B. Fedison and T.P. Chow, IEEE Electron Device Letters, vol. 22 (2001), p. 119.
5. Y. Tang J.B. Fedison and T.P. Chow, IEEE Electron Device Letters, vol. 23 (2002), p. 16.